Ultra-Wide Band-Gap Gallium Oxide MOSFET
Developing industry-leading resilience, our Radiation Type Gallium Oxide MOSFET is a testament to durability in high-radiation environments. This robust component is designed to withstand total ionizing doses and displacement damage while maintaining optimal carrier concentration. It resists single-event effects with no catastrophic failure from SE Gate Rupture (SEGR), offering exceptional radiation tolerance and performance stability with minimal die change, primarily due to innovative packaging. Choose our Gallium Oxide MOSFET for its low Figure of Merit, ensuring high efficiency and reliability for your critical applications.
→ Devices support VDS: 650V (breakdown voltage), Drain Current ID of 40A, VGSTH of -5V, and RDSON of 24mohm.
→ No heavy-ion induced permanent destructive effects upon irradiation in block configuration.
→ Ions with a silicon-equivalent surface-incident LET of 75 MeV-cm²/mg.
→ Sufficient energy to fully penetrate the active volume before the ions reach their LET values, with recovery in 10ns.
→ MOSFET models have stable thermal performance under SEE conditions, ensuring no thermal breakdown in the structure in a powered reverse-bias state and a TID of 100Krad (Si).
→ Total Ionizing Dose and Displacement Damage: Strong bond, reinjection of carriers from Al2O3/Al2N4. Carrier concentration remains less affected, with a variation of less than 20%.
→ Single Event Effects Resistance: SE Gate Rupture (SEGR): No catastrophic failures observed. SE Burn Out (SEB): Designed to prevent catastrophic failures.
→ Single Event Effects Resistance: SE Gate Rupture (SEGR): No catastrophic failures observed. SE Burn Out (SEB): Designed to prevent catastrophic failures.
→ Radiation Tolerance: Highly resilient with almost no die change, primarily influenced by enhancements in packaging.
→ Performance Efficiency: Low Figure of Merit (FOM), indicating high performance efficiency in critical applications.